- Series :
- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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70,040
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Infineon Technologies | MOSFET N-CH 600V 20.7A TO220-3 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 35W (Tc) | N-Channel | 600V | 20.7A (Tc) | 220 mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | 2400pF @ 25V | 10V | ±20V | |||
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49,280
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|
Rohm Semiconductor | MOSFET N-CH 600V 30A TO220FM | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 86W (Tc) | N-Channel | 600V | 30A (Tc) | 130 mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | 2350pF @ 25V | 10V | ±20V | |||
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44,420
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|
Rohm Semiconductor | MOSFET N-CH 600V 24A TO220FM | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 74W (Tc) | N-Channel | 600V | 24A (Tc) | 165 mOhm @ 11.3A, 10V | 5V @ 1mA | 45nC @ 10V | 2000pF @ 25V | 10V | ±20V | |||
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26,400
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|
Rohm Semiconductor | NCH 600V 15A POWER MOSFET | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 60W (Tc) | N-Channel | 600V | 15A (Tc) | 290 mOhm @ 6.5A, 10V | 5V @ 1mA | 27.5nC @ 10V | 1050pF @ 25V | 10V | ±20V | |||
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39,520
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ON Semiconductor | MOSFET N-CH 650V 10.2A TO220 | FRFET®, SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 33W (Tc) | N-Channel | 650V | 10.2A (Tc) | 380 mOhm @ 5.1A, 10V | 5V @ 1mA | 43nC @ 10V | 1680pF @ 100V | 10V | ±20V | |||
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75,600
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|
Rohm Semiconductor | MOSFET N-CH 600V 30A TO220FM | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 86W (Tc) | N-Channel | 600V | 30A (Tc) | 130 mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | 2350pF @ 25V | 10V | ±20V |