- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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55,940
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 800V 2A TO-220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 30.5W (Tc) | N-Channel | - | 800V | 2A (Tc) | 2.7 Ohm @ 1.2A, 10V | 3.9V @ 120µA | 16nC @ 10V | 290pF @ 100V | 10V | ±20V | |||
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42,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Sanken | MOSFET N-CH 60V 24A TO-220F | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 29W (Tc) | N-Channel | - | 60V | 24A (Tc) | 21.8 mOhm @ 15.8A, 10V | 2.5V @ 250µA | 16nC @ 10V | 1050pF @ 25V | 4.5V, 10V | ±20V | |||
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59,900
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 30A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 25W (Tc) | N-Channel | - | 60V | 30A (Tc) | 15 mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | 1050pF @ 30V | 10V | ±20V |
