- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
67,980
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Infineon Technologies | MOSFET P-CH 55V 9.5A TO-220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 29W (Tc) | P-Channel | - | 55V | 9.5A (Tc) | 175 mOhm @ 5.4A, 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | 10V | ±20V | ||
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25,240
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|
Infineon Technologies | MOSFET N-CH 600V TO220FP-3 | CoolMOS™ P6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 31W (Tc) | N-Channel | - | 600V | 10.6A (Tc) | 380 mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19nC @ 10V | 877pF @ 100V | 10V | ±20V | |||
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42,760
One step to sell excess stocks.Or submit Qty to get quotes
|
Toshiba Semiconductor and Storage | MOSFET N-CH 800V 9.5A TO220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 800V | 9.5A (Ta) | 550 mOhm @ 4.8A, 10V | 4V @ 450µA | 19nC @ 10V | 1150pF @ 300V | 10V | ±20V |
