- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
57,920
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|
Infineon Technologies | MOSFET N-CH 60V 21A TO220FP | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 37W (Tc) | N-Channel | - | 60V | 21A (Tc) | 42 mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V | ||
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21,400
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|
ON Semiconductor | FET ENGR DEV-NOT REL | PowerTrench® | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 2.4W (Ta), 35W (Tc) | N-Channel | - | 100V | 76A (Tc) | 8.5 mOhm @ 76A, 10V | 4V @ 130µA | 34nC @ 10V | 2475pF @ 50V | 10V | ±20V | |||
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61,960
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 32A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 120V | 32A (Tc) | 13.8 mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | 2000pF @ 60V | 10V | ±20V | |||
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48,680
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|
Infineon Technologies | MOSFET N-CH 900V 5.7A TO220-3 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-FP | 32W (Tc) | N-Channel | - | 900V | 5.7A (Tc) | 1 Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34nC @ 10V | 850pF @ 100V | 10V | ±20V | |||
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56,580
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|
Infineon Technologies | MOSFET N-CH 600V 11A TO220FP-3 | CoolMOS™ C7 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 32W (Tc) | N-Channel | - | 600V | 11A (Tc) | 120 mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | 1500pF @ 400V | 10V | ±20V | |||
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66,980
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|
Infineon Technologies | MOSFET N-CH 55V 21A TO220FP | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | 37W (Tc) | N-Channel | - | 55V | 21A (Tc) | 40 mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | 10V | ±20V |
