Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPCF8101(TE85L,F,M
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RFQ
74,660
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 6A VS-8 U-MOSIII Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead VS-8 (2.9x1.5) 700mW (Ta) P-Channel - 12V 6A (Ta) 28 mOhm @ 3A, 4.5V 1.2V @ 200µA 18nC @ 5V 1600pF @ 10V 1.8V, 4.5V ±8V
TPCF8101(TE85L,F,M
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19,380
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 6A VS-8 U-MOSIII Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead VS-8 (2.9x1.5) 700mW (Ta) P-Channel - 12V 6A (Ta) 28 mOhm @ 3A, 4.5V 1.2V @ 200µA 18nC @ 5V 1600pF @ 10V 1.8V, 4.5V ±8V
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RFQ
21,480
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 6A VS8 2-3U1A U-MOSIII Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead VS-8 (2.9x1.5) 700mW (Ta) P-Channel - 20V 6A (Ta) 30 mOhm @ 3A, 4.5V 1.2V @ 200µA 19nC @ 5V 1550pF @ 10V 1.8V, 4.5V ±8V
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