- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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34,980
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | MOSFET N-CH 950V 4A I2PAKFP | SuperMESH3™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 25W (Tc) | N-Channel | - | 950V | 4A (Tc) | 3.5 Ohm @ 2A, 10V | 5V @ 100µA | 19nC @ 10V | 460pF @ 25V | 10V | ±30V | |||
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47,180
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | MOSFET N CH 950V 10A I2PAKFP | SuperMESH3™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 40W (Tc) | N-Channel | - | 950V | 10A (Tc) | 850 mOhm @ 5A, 10V | 5V @ 100µA | 51nC @ 10V | 1620pF @ 100V | 10V | ±30V | |||
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62,520
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | N-CHANNEL 950 V, 0.41 OHM TYP., | MDmesh™ K5 | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 30W | N-Channel | - | 950V | 7.5A (Ta) | 500 mOhm @ 5.5A, 10V | 5V @ 100µA | 30nC @ 10V | 855pF @ 10V | 10V | ±30V |
