- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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70,080
One step to sell excess stocks.Or submit Qty to get quotes
|
Cree/Wolfspeed | ZFET 900V, 30 MOHM, G3 SIC MOSFE | C3M™ | Active | - | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 149W (Tc) | N-Channel | - | 900V | 63A (Tc) | 39 mOhm @ 35A, 15V | 3.5V @ 11mA | 87nC @ 15V | 1864pF @ 600V | 15V | +15V, -4V | |||
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51,720
One step to sell excess stocks.Or submit Qty to get quotes
|
Cree/Wolfspeed | MOSFET N-CH 1200V 30.8A TO247-4 | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 119W (Tc) | N-Channel | - | 1200V | 30.8A (Tc) | 90 mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | 1350pF @ 1000V | 15V | +19V, -8V | |||
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38,060
One step to sell excess stocks.Or submit Qty to get quotes
|
Cree/Wolfspeed | MOSFET N-CH 1000V 22A TO247-4L | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4L | 83W (Tc) | N-Channel | - | 1000V | 22A (Tc) | 155 mOhm @ 15A, 15V | 3.5V @ 3mA | 21.5nC @ 15V | 350pF @ 600V | 15V | ±15V | |||
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51,560
One step to sell excess stocks.Or submit Qty to get quotes
|
Cree/Wolfspeed | 1000V, 65 MOHM, G3 SIC MOSFET | C3M™ | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 150°C (TJ) | - | TO-247-4 | TO-247-4L | 113.5W (Tc) | N-Channel | - | 1000V | 35A (Tc) | 78 mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | 660pF @ 600V | 15V | +19V, -8V |
