6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI4435DYPBF
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RFQ
42,720
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Infineon Technologies MOSFET P-CH 30V 8A 8-SOIC HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 4.5V, 10V ±20V
SI4435DY
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RFQ
59,420
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Infineon Technologies MOSFET P-CH 30V 8A 8-SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 4.5V, 10V ±20V
SI4435DYTR
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RFQ
49,480
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Infineon Technologies MOSFET P-CH 30V 8A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 4.5V, 10V ±20V
SI4435DYTRPBF
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RFQ
34,920
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Infineon Technologies MOSFET P-CH 30V 8A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 4.5V, 10V ±20V
SI4435DYTRPBF
Per Unit
$0.53
RFQ
27,520
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Infineon Technologies MOSFET P-CH 30V 8A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 4.5V, 10V ±20V
SI4435DYTRPBF
Per Unit
$0.20
RFQ
42,100
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 30V 8A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 8A (Tc) 20 mOhm @ 8A, 10V 1V @ 250µA 60nC @ 10V 2320pF @ 15V 4.5V, 10V ±20V
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