7 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF7406GTRPBF
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RFQ
69,780
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Infineon Technologies MOSFET P-CH 30V 6.7A 8-SOIC HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.8A (Ta) 45 mOhm @ 2.8A, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V 4.5V, 10V ±20V
IRF7406GTRPBF
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RFQ
67,020
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Infineon Technologies MOSFET P-CH 30V 6.7A 8-SOIC HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.8A (Ta) 45 mOhm @ 2.8A, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V 4.5V, 10V ±20V
IRF7406GTRPBF
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RFQ
79,760
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Infineon Technologies MOSFET P-CH 30V 6.7A 8-SOIC HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.8A (Ta) 45 mOhm @ 2.8A, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V 4.5V, 10V ±20V
IRF7406PBF
Per Unit
$0.25
RFQ
42,220
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Infineon Technologies MOSFET P-CH 30V 5.8A 8-SOIC HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.8A (Ta) 45 mOhm @ 2.8A, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V 4.5V, 10V ±20V
IRF7406TRPBF
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RFQ
65,040
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Infineon Technologies MOSFET P-CH 30V 5.8A 8-SOIC HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.8A (Ta) 45 mOhm @ 2.8A, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V 4.5V, 10V ±20V
IRF7406TRPBF
Per Unit
$0.62
RFQ
16,240
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Infineon Technologies MOSFET P-CH 30V 5.8A 8-SOIC HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.8A (Ta) 45 mOhm @ 2.8A, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V 4.5V, 10V ±20V
IRF7406TRPBF
Per Unit
$0.24
RFQ
46,720
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET P-CH 30V 5.8A 8-SOIC HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.8A (Ta) 45 mOhm @ 2.8A, 10V 1V @ 250µA 59nC @ 10V 1100pF @ 25V 4.5V, 10V ±20V
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