Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF9335PBF
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RFQ
74,460
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Infineon Technologies MOSFET P-CH 30V 5.4A 8-SO HEXFET® Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 30V 5.4A (Ta) 59 mOhm @ 5.4A, 10V 2.4V @ 10µA 14nC @ 10V 386pF @ 25V 4.5V, 10V ±20V
AUIRF7207Q
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51,520
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Infineon Technologies MOSFET P-CH 20V 5.4A 8SOIC HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel - 20V 5.4A (Ta) 60 mOhm @ 5.4A, 4.5V 1.6V @ 250µA 22nC @ 4.5V 780pF @ 15V 2.7V, 4.5V ±12V
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