Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
BUK9M28-80EX
Per Unit
$0.36
RFQ
55,220
One step to sell excess stocks.Or submit Qty to get quotes
Nexperia USA Inc. MOSFET N-CH 80V 33A LFPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 (5-Lead) LFPAK33 75W (Tc) N-Channel - 80V 33A (Tc) 25 mOhm @ 10A, 10V 2.1V @ 1mA 16.7nC @ 5V 2275pF @ 25V 5V ±10V
BUK9M9R1-40EX
Per Unit
$0.41
RFQ
63,200
One step to sell excess stocks.Or submit Qty to get quotes
Nexperia USA Inc. MOSFET N-CH 40V 64A LFPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 LFPAK33 75W (Tc) N-Channel - 40V 64A (Tc) 7.3 mOhm @ 20A, 10V 2.1V @ 1mA 16.2nC @ 5V 2048pF @ 25V 5V ±10V
BUK9M6R6-30EX
Per Unit
$0.36
RFQ
24,460
One step to sell excess stocks.Or submit Qty to get quotes
Nexperia USA Inc. MOSFET N-CH 30V 70A LFPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SOT-1210, 8-LFPAK33 LFPAK33 75W (Tc) N-Channel - 30V 70A (Tc) 5.3 mOhm @ 20A, 10V 2.1V @ 1mA 18nC @ 5V 2001pF @ 25V 5V ±10V
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