Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFSL3004PBF
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RFQ
33,620
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Infineon Technologies MOSFET N-CH 40V 195A TO262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 380W (Tc) N-Channel - 40V 195A (Ta) 1.75 mOhm @ 195A, 10V 4V @ 250µA 240nC @ 10V 9200pF @ 25V 10V ±20V
IRFB3004GPBF
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RFQ
58,280
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Infineon Technologies MOSFET N-CH 40V 195A TO220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 380W (Tc) N-Channel - 40V 195A (Tc) 1.75 mOhm @ 195A, 10V 4V @ 250µA 240nC @ 10V 9200pF @ 25V 10V ±20V
IRFB3004PBF
Per Unit
$2.57
RFQ
44,260
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 40V 195A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 380W (Tc) N-Channel - 40V 195A (Tc) 1.75 mOhm @ 195A, 10V 4V @ 250µA 240nC @ 10V 9200pF @ 25V 10V ±20V
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