Drain to Source Voltage (Vdss) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPA60R180P7SXKSA1
Per Unit
$0.97
RFQ
22,600
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CHANNEL 600V 18A TO220 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 26W (Tc) N-Channel - 600V 18A (Tc) 180 mOhm @ 5.6A, 10V 4V @ 280µA 25nC @ 10V 1081pF @ 400V 10V ±20V
IPAW60R180P7SXKSA1
Per Unit
$0.97
RFQ
53,000
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CHANNEL 650V 18A TO220 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 26W (Tc) N-Channel - 650V 18A (Tc) 180 mOhm @ 5.6A, 10V 4V @ 280µA 25nC @ 10V 1081pF @ 400V 10V ±20V
IPA60R180P7XKSA1
Per Unit
$1.41
RFQ
39,340
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CHANNEL 650V 18A TO220 CoolMOS™ P7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220 Full Pack 26W (Tc) N-Channel - 650V 18A (Tc) 180 mOhm @ 5.6A, 10V 4V @ 280µA 25nC @ 10V 1081pF @ 400V 10V ±20V
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