- Packaging :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
15,120
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|
Nexperia USA Inc. | MOSFET P-CH 12V 3.2A DFN1010D-3G | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 12V | 3.2A (Ta) | 72 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 634pF @ 6V | 1.2V, 4.5V | ±8V | ||
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60,180
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|
Nexperia USA Inc. | MOSFET P-CH 12V 3.2A DFN1010D-3G | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 12V | 3.2A (Ta) | 72 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 634pF @ 6V | 1.2V, 4.5V | ±8V | |||
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33,880
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET P-CH 12V 3.2A DFN1010D-3G | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 12V | 3.2A (Ta) | 72 mOhm @ 3.2A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 634pF @ 6V | 1.2V, 4.5V | ±8V | |||
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GET PRICE |
55,440
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET P-CH 20V DFN1010D-3G | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 20V | 2.9A (Ta) | 85 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 608pF @ 10V | 1.2V, 4.5V | ±8V | ||
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20,280
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET P-CH 20V DFN1010D-3G | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 20V | 2.9A (Ta) | 85 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 608pF @ 10V | 1.2V, 4.5V | ±8V | |||
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50,000
One step to sell excess stocks.Or submit Qty to get quotes
|
Nexperia USA Inc. | MOSFET P-CH 20V DFN1010D-3G | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 317mW (Ta), 8.33W (Tc) | P-Channel | 20V | 2.9A (Ta) | 85 mOhm @ 2.9A, 4.5V | 1V @ 250µA | 12nC @ 4.5V | 608pF @ 10V | 1.2V, 4.5V | ±8V |
