Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCH041N60E
Per Unit
$6.58
RFQ
43,800
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N CH 600V 77A TO-247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 592W (Tc) N-Channel - 600V 77A (Tc) 41 mOhm @ 39A, 10V 3.5V @ 250µA 380nC @ 10V 13700pF @ 100V 10V ±20V
FCH043N60
Per Unit
$6.87
RFQ
57,520
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 75A TO247 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 592W (Tc) N-Channel - 600V 75A (Tc) 43 mOhm @ 38A, 10V 3.5V @ 250µA 215nC @ 10V 12225pF @ 400V 10V ±20V
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