- Mounting Type :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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54,960
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|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 | 273W (Tc) | N-Channel | 1200V | 51A (Tc) | 55 mOhm @ 40A, 20V | 2.5V @ 1mA | 235nC @ 20V | - | 20V | +25V, -10V | ||
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33,740
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|
Microsemi Corporation | MOSFET N-CH 1200V 41A TO247 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 273W (Tc) | N-Channel | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V | ||
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GET PRICE |
12,460
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|
Microsemi Corporation | MOSFET N-CH 700V SOT227 | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 273W (Tc) | N-Channel | 700V | 78A (Tc) | 45 mOhm @ 60A, 20V | 2.4V @ 1mA | 270nC @ 20V | 3950pF @ 700V | 20V | +25V, -10V | ||
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54,380
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|
Microsemi Corporation | MOSFET N-CH 1200V 41A D3PAK | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 273W (Tc) | N-Channel | 1200V | 41A (Tc) | 100 mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130nC @ 20V | 2560pF @ 1000V | 20V | +25V, -10V |
