- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
65,060
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CHAN 100V POWERPAK 1212 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | 3.2W (Ta), 24W (Tc) | N-Channel | - | 100V | 5.2A (Ta), 14.2A (Tc) | 54 mOhm @ 4A, 10V | 4V @ 250µA | 13nC @ 10V | 550pF @ 50V | 7.5V, 10V | ±20V | |||
|
|
56,820
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CHAN 60V POWERPAK 1212- | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | 3.2W (Ta), 24W (Tc) | N-Channel | - | 60V | 9.8A (Ta), 16A (Tc) | 18.5 mOhm @ 4A, 10V | 4V @ 250µA | 13.5nC @ 10V | 540pF @ 30V | 7.5V, 10V | ±20V |