Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFR210BTM_FP001
GET PRICE
RFQ
39,220
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 200V 2.7A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 26W (Tc) N-Channel 200V 2.7A (Tc) 1.5 Ohm @ 1.35A, 10V 4V @ 250µA 9.3nC @ 10V 225pF @ 25V 10V ±30V
SSU1N50BTU
Per Unit
$0.21
RFQ
41,500
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 520V 1.3A IPAK - Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 2.5W (Ta), 26W (Tc) N-Channel 520V 1.3A (Tc) 5.3 Ohm @ 650mA, 10V 4V @ 250µA 11nC @ 10V 340pF @ 25V 10V ±30V
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