Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
7 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF6712STR1PBF
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RFQ
28,120
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Infineon Technologies MOSFET N-CH 25V 17A DIRECTFET HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SQ DIRECTFET™ SQ 2.2W (Ta), 36W (Tc) N-Channel - 25V 17A (Ta), 68A (Tc) 4.9 mOhm @ 17A, 10V 2.4V @ 50µA 18nC @ 4.5V 1570pF @ 13V 4.5V, 10V ±20V
IRF6712STR1PBF
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RFQ
55,120
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Infineon Technologies MOSFET N-CH 25V 17A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SQ DIRECTFET™ SQ 2.2W (Ta), 36W (Tc) N-Channel - 25V 17A (Ta), 68A (Tc) 4.9 mOhm @ 17A, 10V 2.4V @ 50µA 18nC @ 4.5V 1570pF @ 13V 4.5V, 10V ±20V
IRF6712STR1PBF
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RFQ
71,040
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Infineon Technologies MOSFET N-CH 25V 17A DIRECTFET HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SQ DIRECTFET™ SQ 2.2W (Ta), 36W (Tc) N-Channel - 25V 17A (Ta), 68A (Tc) 4.9 mOhm @ 17A, 10V 2.4V @ 50µA 18nC @ 4.5V 1570pF @ 13V 4.5V, 10V ±20V
BSF083N03LQ G
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RFQ
65,720
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Infineon Technologies MOSFET N-CH 30V 53A MG-WDSON-2 OptiMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount 3-WDSON MG-WDSON-2, CanPAK M™ 2.2W (Ta), 36W (Tc) N-Channel - 30V 13A (Ta), 53A (Tc) 8.3 mOhm @ 20A, 10V 2.2V @ 250µA 18nC @ 10V 1800pF @ 15V 4.5V, 10V ±20V
IRF6712STRPBF
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RFQ
77,460
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Infineon Technologies MOSFET N-CH 25V 17A DIRECTFET HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SQ DIRECTFET™ SQ 2.2W (Ta), 36W (Tc) N-Channel - 25V 17A (Ta), 68A (Tc) 4.9 mOhm @ 17A, 10V 2.4V @ 50µA 18nC @ 4.5V 1570pF @ 13V 4.5V, 10V ±20V
IRF6712STRPBF
Per Unit
$0.82
RFQ
24,320
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Infineon Technologies MOSFET N-CH 25V 17A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SQ DIRECTFET™ SQ 2.2W (Ta), 36W (Tc) N-Channel - 25V 17A (Ta), 68A (Tc) 4.9 mOhm @ 17A, 10V 2.4V @ 50µA 18nC @ 4.5V 1570pF @ 13V 4.5V, 10V ±20V
IRF6712STRPBF
Per Unit
$0.30
RFQ
36,040
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 25V 17A DIRECTFET HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric SQ DIRECTFET™ SQ 2.2W (Ta), 36W (Tc) N-Channel - 25V 17A (Ta), 68A (Tc) 4.9 mOhm @ 17A, 10V 2.4V @ 50µA 18nC @ 4.5V 1570pF @ 13V 4.5V, 10V ±20V
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