Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Vgs (Max) :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
RTQ020N05TR
Per Unit
$0.09
RFQ
68,560
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 45V 2A TSMT6 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 600mW (Ta) N-Channel 45V 2A (Ta) 190 mOhm @ 2A, 4.5V 1.5V @ 1mA 2.3nC @ 4.5V 150pF @ 10V 2.5V, 4.5V ±12V
RTQ020N03TR
GET PRICE
RFQ
14,200
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 30V 2A TSMT6 - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 1.25W (Ta) N-Channel 30V 2A (Ta) 125 mOhm @ 2A, 4.5V 1.5V @ 1mA 3.3nC @ 4.5V 135pF @ 10V 2.5V, 4.5V 12V
RTQ020N03TR
Per Unit
$0.26
RFQ
15,020
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 30V 2A TSMT6 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 1.25W (Ta) N-Channel 30V 2A (Ta) 125 mOhm @ 2A, 4.5V 1.5V @ 1mA 3.3nC @ 4.5V 135pF @ 10V 2.5V, 4.5V 12V
RTQ020N03TR
Per Unit
$0.08
RFQ
56,340
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 30V 2A TSMT6 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSMT6 (SC-95) 1.25W (Ta) N-Channel 30V 2A (Ta) 125 mOhm @ 2A, 4.5V 1.5V @ 1mA 3.3nC @ 4.5V 135pF @ 10V 2.5V, 4.5V 12V
Page 1 / 1