4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHD6N80E-GE3
Per Unit
$1.22
RFQ
13,160
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHAN 800V TO-252 E Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 78W (Tc) N-Channel - 800V 5.4A (Tc) 940 mOhm @ 3A, 10V 4V @ 250µA 44nC @ 10V 827pF @ 100V 10V ±30V
SIHA6N80E-GE3
Per Unit
$1.44
RFQ
37,720
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHAN 800V TO-220FP E Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 31W (Tc) N-Channel - 800V 5.4A (Tc) 940 mOhm @ 3A, 10V 4V @ 250µA 44nC @ 10V 827pF @ 100V 10V ±30V
SIHP6N80E-GE3
Per Unit
$1.40
RFQ
69,600
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHAN 800V TO-220AB E Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 78W (Tc) N-Channel - 800V 5.4A (Tc) 940 mOhm @ 3A, 10V 4V @ 250µA 44nC @ 10V 827pF @ 100V 10V ±30V
SIHU6N80E-GE3
Per Unit
$1.34
RFQ
41,460
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CHAN 800V TO-251 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 78W (Tc) N-Channel - 800V 5.4A (Tc) 940 mOhm @ 3A, 10V 4V @ 250µA 44nC @ 10V 827pF @ 100V 10V ±30V
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