3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPP80N06S209AKSA1
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RFQ
67,960
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Infineon Technologies MOSFET N-CH 55V 80A TO220-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 190W (Tc) N-Channel - 55V 80A (Tc) 9.1 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 2360pF @ 25V 10V ±20V
SPP80N06S2-09
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RFQ
59,740
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Infineon Technologies MOSFET N-CH 55V 80A TO-220 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 190W (Tc) N-Channel - 55V 80A (Tc) 9.1 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 3140pF @ 25V 10V ±20V
IPP80N06S209AKSA2
Per Unit
$0.78
RFQ
66,600
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 55V 80A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 190W (Tc) N-Channel - 55V 80A (Tc) 9.1 mOhm @ 50A, 10V 4V @ 125µA 80nC @ 10V 2360pF @ 25V 10V ±20V
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