- Manufacture :
- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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16,100
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|
Vishay Siliconix | MOSFET N-CH 500V 14A TO-200AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | 500V | 14A (Tc) | 400 mOhm @ 7A, 10V | 5V @ 250µA | 58nC @ 10V | 1144pF @ 100V | 10V | ±30V | |||
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19,480
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|
Vishay Siliconix | MOSFET N-CH 500V 14A TO-200AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | 500V | 14A (Tc) | 400 mOhm @ 7A, 10V | 5V @ 250µA | 58nC @ 10V | 1144pF @ 100V | 10V | ±30V | |||
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51,060
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Infineon Technologies | MOSFET N CH 40V 120A TO220AB | HEXFET®, StrongIRFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | 4730pF @ 25V | 6V, 10V | ±20V | |||
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GET PRICE |
28,900
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|
Vishay Siliconix | MOSFET N-CHAN 600V | EL | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | 600V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | 1757pF @ 100V | 10V | ±30V | ||
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54,740
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|
Vishay Siliconix | MOSFET N-CHAN 600V | EL | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | 600V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | 1757pF @ 100V | 10V | ±30V | |||
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67,980
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|
Vishay Siliconix | MOSFET N-CHAN 600V | EL | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | 600V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | 1757pF @ 100V | 10V | ±30V | |||
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29,880
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|
Vishay Siliconix | MOSFET N-CH 800V 15A TO220AB | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | 800V | 15A (Tc) | 290 mOhm @ 8.5A, 10V | 4V @ 250µA | 122nC @ 10V | 2408pF @ 100V | 10V | ±30V | |||
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35,260
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|
Vishay Siliconix | MOSFET N-CH 650V 21A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | 650V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | 2322pF @ 100V | 10V | ±20V |
