Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$0.43
RFQ
64,620
One step to sell excess stocks.Or submit Qty to get quotes
Diodes Incorporated MOSFET N-CH 600V 3.3A TO220AB Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 104W (Tc) N-Channel - 600V 3.3A (Tc) 3.5 Ohm @ 1.5A, 10V 4V @ 250µA 12.6nC @ 10V 354pF @ 25V 10V ±30V
STP4NK80Z
Per Unit
$0.91
RFQ
28,940
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 800V 3A TO-220 SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel - 800V 3A (Tc) 3.5 Ohm @ 1.5A, 10V 4.5V @ 50µA 22.5nC @ 10V 575pF @ 25V 10V ±30V
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