6 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK3A60DA(STA4,Q,M)
Per Unit
$0.56
RFQ
12,420
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 2.5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 600V 2.5A (Ta) 2.8 Ohm @ 1.3A, 10V 4.4V @ 1mA 9nC @ 10V 380pF @ 25V 10V ±30V
STP8NM60D
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RFQ
39,040
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STMicroelectronics MOSFET N-CH 600V 8A TO-220 MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel - 600V 8A (Tc) 1 Ohm @ 2.5A, 10V 5V @ 250µA 18nC @ 10V 380pF @ 25V 10V ±30V
STB8NM60D
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RFQ
13,840
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STMicroelectronics MOSFET N-CH 600V 8A D2PAK MDmesh™ Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 100W (Tc) N-Channel - 600V 8A (Tc) 1 Ohm @ 2.5A, 10V 5V @ 250µA 18nC @ 10V 380pF @ 25V 10V ±30V
STB8NM60D
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RFQ
13,280
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STMicroelectronics MOSFET N-CH 600V 8A D2PAK MDmesh™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 100W (Tc) N-Channel - 600V 8A (Tc) 1 Ohm @ 2.5A, 10V 5V @ 250µA 18nC @ 10V 380pF @ 25V 10V ±30V
STB8NM60D
Per Unit
$0.70
RFQ
66,680
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STMicroelectronics MOSFET N-CH 600V 8A D2PAK MDmesh™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 100W (Tc) N-Channel - 600V 8A (Tc) 1 Ohm @ 2.5A, 10V 5V @ 250µA 18nC @ 10V 380pF @ 25V 10V ±30V
TK3A60DA(Q,M)
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RFQ
42,580
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 2.5A TO-220SIS π-MOSVII Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 600V 2.5A (Ta) 2.8 Ohm @ 1.3A, 10V 4.4V @ 1mA 9nC @ 10V 380pF @ 25V 10V ±30V
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