2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQE10N20CTU
GET PRICE
RFQ
25,040
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 200V 4A TO-126 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-225AA, TO-126-3 TO-126 12.8W (Tc) N-Channel - 200V 4A (Tc) 360 mOhm @ 2A, 10V 4V @ 250µA 26nC @ 10V 510pF @ 25V 10V ±30V
STD4NK60Z-1
Per Unit
$0.35
RFQ
47,900
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 4A IPAK SuperMESH™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 70W (Tc) N-Channel - 600V 4A (Tc) 2 Ohm @ 2A, 10V 4.5V @ 50µA 26nC @ 10V 510pF @ 25V 10V ±30V
Page 1 / 1