4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRF5305LPBF
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RFQ
29,460
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Infineon Technologies MOSFET P-CH 55V 31A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IRF5305L
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RFQ
14,840
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Infineon Technologies MOSFET P-CH 55V 31A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 110W (Tc) P-Channel - 55V 31A (Tc) 60 mOhm @ 16A, 10V 4V @ 250µA 63nC @ 10V 1200pF @ 25V 10V ±20V
IPI60R099CPAAKSA1
Per Unit
$2.42
RFQ
69,560
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Infineon Technologies MOSFET N-CH 60V 31A TO-262 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 255W (Tc) N-Channel - 600V 31A (Tc) 105 mOhm @ 18A, 10V 3.5V @ 1.2mA 80nC @ 10V 2800pF @ 100V 10V ±20V
IPI60R099CPXKSA1
Per Unit
$2.41
RFQ
16,000
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 31A TO-262 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 255W (Tc) N-Channel - 600V 31A (Tc) 99 mOhm @ 18A, 10V 3.5V @ 1.2mA 80nC @ 10V 2800pF @ 100V 10V ±20V
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