- Manufacture :
- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
10 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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24,140
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Global Power Technologies Group | MOSFET N-CH 650V 4A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 98.4W (Tc) | N-Channel | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | ||
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67,880
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Global Power Technologies Group | MOSFET N-CH 650V 4A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32.8W (Tc) | N-Channel | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | ||
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13,200
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Global Power Technologies Group | MOSFET N-CH 650V 4A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 98.4W (Tc) | N-Channel | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | ||
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48,020
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Global Power Technologies Group | MOSFET N-CH 650V 4A DPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 98.4W (Tc) | N-Channel | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | ||
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16,420
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Diodes Incorporated | MOSFET P-CH 30V TSOT-26 | - | Preliminary | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | - | - | 1.38W | P-Channel | 30V | 4.3A (Ta) | 50 mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | 642pF @ 25V | 4.5V, 10V | ±25V | ||
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62,620
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Diodes Incorporated | MOSFET P-CH 30V TSOT-26 | - | Preliminary | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | - | - | - | 1.38W | P-Channel | 30V | 4.3A (Ta) | 50 mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | 642pF @ 25V | 4.5V, 10V | ±25V | ||
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34,820
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Diodes Incorporated | MOSFET P-CH 30V 4.3A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.38W (Ta) | P-Channel | 30V | 4.3A (Ta) | 50 mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | 642pF @ 25V | 4.5V, 10V | ±25V | |||
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26,820
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|
Diodes Incorporated | MOSFET P-CH 30V 4.3A SOT23 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.38W (Ta) | P-Channel | 30V | 4.3A (Ta) | 50 mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | 642pF @ 25V | 4.5V, 10V | ±25V | ||
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57,220
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|
Diodes Incorporated | MOSFET P-CH 30V 4.3A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.38W (Ta) | P-Channel | 30V | 4.3A (Ta) | 50 mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | 642pF @ 25V | 4.5V, 10V | ±25V | |||
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|
37,100
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|
Diodes Incorporated | MOSFET P-CH 30V 4.3A SOT23 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.38W (Ta) | P-Channel | 30V | 4.3A (Ta) | 50 mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | 642pF @ 25V | 4.5V, 10V | ±25V |