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IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQE10N20LCTU
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ON Semiconductor MOSFET N-CH 200V 4A TO-126 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-225AA, TO-126-3 TO-126 12.8W (Tc) N-Channel - 200V 4A (Tc) 360 mOhm @ 2A, 10V 2V @ 250µA 19nC @ 5V 490pF @ 25V 5V, 10V ±20V
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