- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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53,100
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|
Global Power Technologies Group | MOSFET N-CH 600V 2A | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 52.1W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4 Ohm @ 1A, 10V | 5V @ 250µA | 9nC @ 10V | 360pF @ 25V | 10V | ±30V | |||
|
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72,360
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ON Semiconductor | MOSFET N-CH 600V 2A IPAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 45W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.7 Ohm @ 1A, 10V | 5V @ 250µA | 11nC @ 10V | 350pF @ 25V | 10V | ±30V | |||
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56,680
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STMicroelectronics | MOSFET N CH 600V 2A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.5 Ohm @ 1A, 10V | 4.5V @ 50µA | 12nC @ 10V | 235pF @ 50V | 10V | ±30V | ||||
|
17,400
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|
STMicroelectronics | MOSFET N-CH 600V 2A IPAK | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.8 Ohm @ 1A, 10V | 4.5V @ 50µA | 15nC @ 10V | 280pF @ 25V | 10V | ±30V |