4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NDD60N745U1-1G
Per Unit
$0.52
RFQ
74,940
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 6.8A IPAK-4 - Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 84W (Tc) N-Channel - 600V 6.6A (Tc) 745 mOhm @ 3.25A, 10V 4V @ 250µA 15nC @ 10V 440pF @ 50V 10V ±25V
NDD60N745U1-35G
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RFQ
15,580
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 6.8A IPAK-3 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 84W (Tc) N-Channel - 600V 6.6A (Tc) 745 mOhm @ 3.25A, 10V 4V @ 250µA 15nC @ 10V 440pF @ 50V 10V ±25V
TK7Q60W,S1VQ
Per Unit
$0.89
RFQ
15,120
One step to sell excess stocks.Or submit Qty to get quotes
Toshiba Semiconductor and Storage MOSFET N-CH 600V 7A IPAK-3 DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 60W (Tc) N-Channel - 600V 7A (Ta) 600 mOhm @ 3.5A, 10V 3.7V @ 350µA 15nC @ 10V 490pF @ 300V 10V ±30V
STD2HNK60Z-1
Per Unit
$0.72
RFQ
17,400
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 2A IPAK SuperMESH™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 600V 2A (Tc) 4.8 Ohm @ 1A, 10V 4.5V @ 50µA 15nC @ 10V 280pF @ 25V 10V ±30V
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