- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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12,240
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|
Global Power Technologies Group | MOSFET N-CH 600V 7.5A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 120W (Tc) | N-Channel | 600V | 7.5A (Tc) | 1.2 Ohm @ 3.75A, 10V | 5V @ 250µA | 23nC @ 10V | 1063pF @ 25V | 10V | ±30V | |||
|
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19,120
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|
Global Power Technologies Group | MOSFET N-CH 600V 4.2A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 98.4W (Tc) | N-Channel | 600V | 4.2A (Tc) | 2.1 Ohm @ 2.1A, 10V | 5V @ 250µA | 14nC @ 10V | 658pF @ 25V | 10V | ±30V | |||
|
GET PRICE |
53,100
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|
Global Power Technologies Group | MOSFET N-CH 600V 2A | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 52.1W (Tc) | N-Channel | 600V | 2A (Tc) | 4 Ohm @ 1A, 10V | 5V @ 250µA | 9nC @ 10V | 360pF @ 25V | 10V | ±30V |