Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFT20N60Q
Per Unit
$5.84
RFQ
48,200
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 20A TO-268 HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 300W (Tc) N-Channel - 600V 20A (Tc) 350 mOhm @ 10A, 10V 4.5V @ 4mA 90nC @ 10V 3300pF @ 25V 10V ±30V
IXFT26N60Q
Per Unit
$7.28
RFQ
58,780
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 26A TO-268 HiPerFET™ Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 360W (Tc) N-Channel - 600V 26A (Tc) 250 mOhm @ 13A, 10V 4.5V @ 4mA 200nC @ 10V 5100pF @ 25V 10V ±20V
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