Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCPF20N60TYDTU
GET PRICE
RFQ
75,920
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 20A TO-220F SuperFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Formed Leads TO-220F-3 (Y-Forming) 39W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCPF7N60YDTU
Per Unit
$1.02
RFQ
51,400
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 7A TO-220F SuperFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Formed Leads TO-220F-3 (Y-Forming) 31W (Tc) N-Channel - 600V 7A (Tc) 600 mOhm @ 3.5A, 10V 5V @ 250µA 30nC @ 10V 920pF @ 25V 10V ±30V
Page 1 / 1