Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFN80N60P3
Per Unit
$12.19
RFQ
74,620
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 66A SOT-227B HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 960W (Tc) N-Channel - 600V 66A (Tc) 70 mOhm @ 40A, 10V 5V @ 8mA 190nC @ 10V 13100pF @ 25V 10V ±30V
IXFN110N60P3
Per Unit
$14.90
RFQ
34,200
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 90A SOT227 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 1500W (Tc) N-Channel - 600V 90A (Tc) 56 mOhm @ 55A, 10V 5V @ 8mA 245nC @ 10V 18000pF @ 25V 10V ±30V
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