Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
APT60M80JVR
GET PRICE
RFQ
24,980
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Microsemi Corporation MOSFET N-CH 600V 55A SOT-227 POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 568W (Tc) N-Channel - 600V 55A (Tc) 80 mOhm @ 500mA, 10V 4V @ 5mA 870nC @ 10V 14500pF @ 25V 10V ±30V
APT60M75JVFR
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RFQ
77,120
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Microsemi Corporation MOSFET N-CH 600V 62A SOT-227 POWER MOS V® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 700W (Tc) N-Channel - 600V 62A (Tc) 75 mOhm @ 31A, 10V 4V @ 5mA 1050nC @ 10V 19800pF @ 25V 10V ±30V
APT60M75JVR
Per Unit
$31.79
RFQ
21,800
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 600V 62A SOT-227 POWER MOS V® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 700W (Tc) N-Channel - 600V 62A (Tc) 75 mOhm @ 500mA, 10V 4V @ 5mA 1050nC @ 10V 19800pF @ 25V 10V ±30V
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