- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
60,080
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|
STMicroelectronics | MOSFET N-CH 600V 24A TO220FP | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | 600V | 24A (Tc) | 150 mOhm @ 12A, 10V | 4V @ 250µA | 37nC @ 10V | 1370pF @ 100V | 10V | ±25V | ||||
|
57,300
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|
Rohm Semiconductor | MOSFET N-CH 600V 24A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | 600V | 24A (Tc) | 165 mOhm @ 11.3A, 10V | 4V @ 1mA | 70nC @ 10V | 1650pF @ 25V | 10V | ±20V | ||||
|
44,420
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|
Rohm Semiconductor | MOSFET N-CH 600V 24A TO220FM | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 74W (Tc) | N-Channel | 600V | 24A (Tc) | 165 mOhm @ 11.3A, 10V | 5V @ 1mA | 45nC @ 10V | 2000pF @ 25V | 10V | ±20V | ||||
|
65,940
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|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 24A ITO220S | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 62.5W (Tc) | N-Channel | 600V | 24A (Tc) | 150 mOhm @ 4.3A, 10V | 4V @ 250µA | 43nC @ 10V | 1765pF @ 100V | 10V | ±30V |