- Manufacture :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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36,720
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Rohm Semiconductor | MOSFET N-CH 600V 4.5A TO220FM | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 35W (Tc) | N-Channel | - | 600V | 4.5A (Ta) | 2.1 Ohm @ 2.25A, 10V | 4V @ 1mA | 16nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
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32,280
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|
STMicroelectronics | MOSFET N-CH 600V TO-220FP | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 20W (Tc) | N-Channel | - | 600V | 4.5A (Ta) | 1.2 Ohm @ 2.25A, 10V | 4V @ 250µA | 8nC @ 10V | 232pF @ 100V | 10V | ±25V |