Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
32,960
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 50W (Tc) N-Channel 600V 11A (Tc) 400 mOhm @ 5.5A, 10V 5V @ 250µA 50nC @ 10V 2333pF @ 100V 10V ±30V
AOTF11C60PL
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RFQ
45,800
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 37W (Tc) N-Channel 600V 11A (Tc) 400 mOhm @ 5.5A, 10V 5V @ 250µA 50nC @ 10V 2333pF @ 100V 10V ±30V
AOTF11C60P
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RFQ
27,680
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Alpha & Omega Semiconductor Inc. MOSFET N-CH - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 50W (Tc) N-Channel 600V 11A (Tc) 400 mOhm @ 5.5A, 10V 5V @ 250µA 50nC @ 10V 2333pF @ 100V 10V ±30V
AOTF11C60
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RFQ
35,300
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 11A TO220F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220-3F 50W (Tc) N-Channel 600V 11A (Tc) 400 mOhm @ 5.5A, 10V 5V @ 250µA 42nC @ 10V 2010pF @ 50V 10V ±30V
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