Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQPF12N60C
GET PRICE
RFQ
76,220
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ON Semiconductor MOSFET N-CH 600V 12A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 51W (Tc) N-Channel - 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 63nC @ 10V 2290pF @ 25V 10V ±30V
FQPF12N60CT
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RFQ
61,680
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ON Semiconductor MOSFET N-CH 600V 12A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 51W (Tc) N-Channel - 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 63nC @ 10V 2290pF @ 25V 10V ±30V
IPA60R190E6XKSA1
Per Unit
$1.71
RFQ
76,180
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 20.2A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO-220-FP 34W (Tc) N-Channel - 600V 20.2A (Tc) 190 mOhm @ 9.5A, 10V 3.5V @ 630µA 63nC @ 10V 1400pF @ 100V 10V ±20V
IPA60R190C6XKSA1
Per Unit
$1.72
RFQ
73,600
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Infineon Technologies MOSFET N-CH 600V 20.2A TO220-FP CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO-220-FP 34W (Tc) N-Channel - 600V 20.2A (Tc) 190 mOhm @ 9.5A, 10V 3.5V @ 630µA 63nC @ 10V 1400pF @ 100V 10V ±20V
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