- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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76,220
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|
ON Semiconductor | MOSFET N-CH 600V 12A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 51W (Tc) | N-Channel | - | 600V | 12A (Tc) | 650 mOhm @ 6A, 10V | 4V @ 250µA | 63nC @ 10V | 2290pF @ 25V | 10V | ±30V | |||
|
GET PRICE |
61,680
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|
ON Semiconductor | MOSFET N-CH 600V 12A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 51W (Tc) | N-Channel | - | 600V | 12A (Tc) | 650 mOhm @ 6A, 10V | 4V @ 250µA | 63nC @ 10V | 2290pF @ 25V | 10V | ±30V | |||
|
76,180
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|
Infineon Technologies | MOSFET N-CH 600V 20.2A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 34W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | 10V | ±20V | ||||
|
73,600
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|
Infineon Technologies | MOSFET N-CH 600V 20.2A TO220-FP | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 34W (Tc) | N-Channel | - | 600V | 20.2A (Tc) | 190 mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | 1400pF @ 100V | 10V | ±20V |