- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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16,520
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STMicroelectronics | MOSFET N-CH 600V 20A TO-220FP | FDmesh™ | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 45W (Tc) | N-Channel | 600V | 20A (Tc) | 290 mOhm @ 10A, 10V | 5V @ 250µA | 37nC @ 10V | 1300pF @ 25V | 10V | ±30V | ||
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21,620
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|
Rohm Semiconductor | MOSFET N-CH 600V 12A TO-220FM | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 600V | 12A (Tc) | 510 mOhm @ 6A, 10V | 5V @ 1mA | 35nC @ 10V | 1300pF @ 25V | 10V | ±30V | |||
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20,440
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|
Rohm Semiconductor | MOSFET N-CH 600V 12A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 600V | 12A (Ta) | 420 mOhm @ 6A, 10V | 4.5V @ 1mA | 35nC @ 10V | 1300pF @ 25V | 10V | ±30V | |||
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36,900
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V TO220SIS | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | 1300pF @ 25V | 10V | ±30V |
