Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPH3202LS
Per Unit
$5.81
RFQ
15,100
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 600V 9A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Surface Mount 3-PowerDFN PQFN (8x8) 65W (Tc) N-Channel 600V 9A (Tc) 350 mOhm @ 5.5A, 8V 2.5V @ 250µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
TPH3206LS
Per Unit
$6.35
RFQ
44,920
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 600V 17A PQFN - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Surface Mount 3-PowerDFN PQFN (8x8) 96W (Tc) N-Channel 600V 17A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
Page 1 / 1