Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
Per Unit
$0.88
RFQ
34,300
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CHANNEL 600V 20A TO220 MDmesh™ M2 Active - MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220 169W (Tc) N-Channel - 600V 20A (Tc) - - - - 10V -
STP12N60M2
Per Unit
$0.97
RFQ
22,820
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 9A TO-220AB MDmesh™ M2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 85W (Tc) N-Channel - 600V 9A (Tc) 450 mOhm @ 4.5A, 10V 4V @ 250µA 16nC @ 10V 538pF @ 100V 10V ±25V
STP16N60M2
Per Unit
$1.51
RFQ
71,140
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 12A TO-220AB MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 600V 12A (Tc) 320 mOhm @ 6A, 10V 4V @ 250µA 19nC @ 10V 700pF @ 100V 10V ±25V
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