4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQP8N60C
Per Unit
$1.00
RFQ
67,280
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 7.5A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 147W (Tc) N-Channel - 600V 7.5A (Tc) 1.2 Ohm @ 3.75A, 10V 4V @ 250µA 36nC @ 10V 1255pF @ 25V 10V ±30V
SIHP12N60E-GE3
Per Unit
$1.55
RFQ
27,520
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 12A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220AB 147W (Tc) N-Channel - 600V 12A (Tc) 380 mOhm @ 6A, 10V 4V @ 250µA 58nC @ 10V 937pF @ 100V 10V ±30V
SIHP14N60E-GE3
Per Unit
$1.36
RFQ
35,700
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 13A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220AB 147W (Tc) N-Channel - 600V 13A (Tc) 309 mOhm @ 7A, 10V 4V @ 250µA 64nC @ 10V 1205pF @ 100V 10V ±30V
FDP7N60NZ
Per Unit
$0.42
RFQ
38,140
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 6.5A TO-220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 147W (Tc) N-Channel - 600V 6.5A (Tc) 1.25 Ohm @ 3.25A, 10V 5V @ 250µA 17nC @ 10V 730pF @ 25V 10V ±30V
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