- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
5 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
74,400
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|
Infineon Technologies | MOSFET N-CH 600V 4.5A TO-220 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | 50W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 950 mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9nC @ 10V | 580pF @ 25V | 10V | ±20V | ||
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43,300
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|
Infineon Technologies | MOSFET N-CH 600V 4.5A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | 50W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 950 mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
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45,720
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|
ON Semiconductor | MOSFET N-CH 600V 4.5A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 100W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 2.5 Ohm @ 2.25A, 10V | 4V @ 250µA | 19nC @ 10V | 670pF @ 25V | 10V | ±30V | |||
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18,000
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|
STMicroelectronics | MOSFET N-CH 600V TO-220 | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 60W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 1.2 Ohm @ 2.25A, 10V | 4V @ 250µA | 8nC @ 10V | 232pF @ 100V | 10V | ±25V | |||
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61,760
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|
ON Semiconductor | MOSFET N-CH 600V 4.5A TO-220-3 | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 100W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 2 Ohm @ 2.25A, 10V | 5V @ 250µA | 13nC @ 10V | 600pF @ 25V | 10V | ±25V |
