- Manufacture :
- Series :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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50,480
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|
ON Semiconductor | MOSFET N-CH 600V 28A TO220 | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 278W (Tc) | N-Channel | - | 600V | 28A (Tc) | 130 mOhm @ 14A, 10V | 3.5V @ 250µA | 70nC @ 10V | 3590pF @ 380V | 10V | ±20V | ||||
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24,180
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|
Vishay Siliconix | MOSFET N-CHAN 600V TO-220AB | EL | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 600V | 28A (Tc) | 120 mOhm @ 15A, 10V | 4V @ 250µA | 120nC @ 10V | 2565pF @ 100V | 10V | ±30V | |||
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67,040
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|
Vishay Siliconix | MOSFET N-CHAN 600V TO-220AB | EL | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 600V | 28A (Tc) | 120 mOhm @ 15A, 10V | 4V @ 250µA | 120nC @ 10V | 2565pF @ 100V | 10V | ±30V | ||||
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28,620
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|
Vishay Siliconix | MOSFET N-CHAN 600V TO-220AB | EL | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 600V | 28A (Tc) | 120 mOhm @ 15A, 10V | 4V @ 250µA | 120nC @ 10V | 2565pF @ 100V | 10V | ±30V | ||||
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23,860
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|
Vishay Siliconix | MOSFET N-CH 600V 28A TO-220-3 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 600V | 28A (Tc) | 123 mOhm @ 14A, 10V | 4V @ 250µA | 120nC @ 10V | 2714pF @ 100V | 10V | ±30V | ||||
|
15,160
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|
STMicroelectronics | MOSFET N-CH 600V 28A | MDmesh™ DM2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 210W (Tc) | N-Channel | - | 600V | 28A (Tc) | 110 mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | 2400pF @ 100V | 10V | ±25V |