- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
48,520
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 6A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 40W (Tc) | N-Channel | - | 600V | 6A (Tc) | 1.6 Ohm @ 3A, 10V | 4.5V @ 250µA | 18.3nC @ 10V | 872pF @ 25V | 10V | ±30V | ||
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GET PRICE |
26,040
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|
STMicroelectronics | MOSFET N-CH 600V 6A TO-220 | PowerMESH™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 600V | 6A (Tc) | 1.2 Ohm @ 3A, 10V | 4V @ 250µA | 45.5nC @ 10V | 1020pF @ 25V | 10V | ±30V | ||
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17,500
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|
STMicroelectronics | MOSFET N-CH 600V 6A TO-220 | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | N-Channel | - | 600V | 6A (Tc) | 1.2 Ohm @ 3A, 10V | 4.5V @ 100µA | 46nC @ 10V | 905pF @ 25V | 10V | ±30V |
