- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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45,980
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|
Infineon Technologies | HIGH POWER_NEW | OptiMOS™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3 | 125W (Tc) | N-Channel | - | 600V | 25A (Tc) | 90 mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | 2103pF @ 400V | 10V | ±20V | |||
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GET PRICE |
13,660
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|
ON Semiconductor | MOSFET N-CH 600V TO-220-3 | SupreMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 216W (Tc) | N-Channel | - | 600V | 25A (Tc) | 125 mOhm @ 12.5A, 10V | 4V @ 250µA | 74nC @ 10V | 3352pF @ 100V | 10V | ±30V | ||
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GET PRICE |
74,080
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|
STMicroelectronics | MOSFET N-CH 600V 25A TO-220 | FDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | N-Channel | - | 600V | 25A (Tc) | 130 mOhm @ 12.5A, 10V | 5V @ 250µA | 100nC @ 10V | 2800pF @ 50V | 10V | ±25V | ||
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GET PRICE |
67,840
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|
STMicroelectronics | MOSFET N-CH 600V 25A TO-220 | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 190W (Tc) | N-Channel | - | 600V | 25A (Tc) | 130 mOhm @ 12.5A, 10V | 4V @ 250µA | 91nC @ 10V | 2700pF @ 50V | 10V | ±30V | ||
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14,700
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|
ON Semiconductor | MOSFET N-CH 600V 25A TO220-3 | SupreMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 216W (Tc) | N-Channel | - | 600V | 25A (Tc) | 125 mOhm @ 12.5A, 10V | 4V @ 250µA | 74nC @ 10V | 3352pF @ 100V | 10V | ±30V | |||
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61,920
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|
Vishay Siliconix | MOSFET N-CH 600V 25A TO220AB | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 250W (Tc) | N-Channel | - | 600V | 25A (Tc) | 146 mOhm @ 12.5A, 10V | 5V @ 250µA | 75nC @ 10V | 2274pF @ 100V | 10V | ±30V |
