Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FQP7N60
GET PRICE
RFQ
35,300
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 7.4A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 142W (Tc) N-Channel - 600V 7.4A (Tc) 1 Ohm @ 3.7A, 10V 5V @ 250µA 38nC @ 10V 1430pF @ 25V 10V ±30V
FCP600N60Z
Per Unit
$1.07
RFQ
60,620
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ON Semiconductor MOSFET N CH 600V 7.4A TO-220F SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 89W (Tc) N-Channel - 600V 7.4A (Tc) 600 mOhm @ 3.7A, 10V 3.5V @ 250µA 26nC @ 10V 1120pF @ 25V 10V ±20V
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