- Manufacture :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
40,900
One step to sell excess stocks.Or submit Qty to get quotes
|
STMicroelectronics | MOSFET N-CH 600V 6.5A TO-220 | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220AB | 70W (Tc) | N-Channel | - | 600V | 6.5A (Tc) | 745 mOhm @ 3.25A, 10V | 4V @ 250µA | 17.4nC @ 10V | 452pF @ 50V | 10V | ±25V | |||
|
|
38,140
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 600V 6.5A TO-220 | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 147W (Tc) | N-Channel | - | 600V | 6.5A (Tc) | 1.25 Ohm @ 3.25A, 10V | 5V @ 250µA | 17nC @ 10V | 730pF @ 25V | 10V | ±30V |
